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| Power Transistor Arrays (F-MOS FETs) PUB4702 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive q Incorporating built-in zener diodes 1.650.2 9.50.2 unit: mm 25.30.2 4.00.2 q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 4.40.5 8.0 s Applications 0.50.15 1.00.25 2.540.2 9!2.54=22.860.25 0.80.25 0.50.15 C1.50.5 s Absolute Maximum Ratings (TC = 25C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 35 10 15 1 2 2.5 15 3.5 150 -55 to +150 Unit V V A A mJ W C C 1 2 3 4 5 6 7 8 9 10 G: Gate D: Drain S: Source 10-Lead Plastic SIL Package Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature * TC = 25C Ta = 25C L = 5mH, IL = 1A, 1 pulse s Electrical Characteristics (TC = 25C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Symbol IDSS IGSS VDSS Vth RDS(on)1 RDS(on)2 | Yfs | VDSF Coss ton tf td(off) Conditions VDS = 25V, VGS = 0 VGS = 15V, VDS = 0 ID = 1mA, VGS = 0 VDS = 10V, ID = 1mA VGS = 10V, ID = 0.5A VGS = 4V, ID = 0.5A VDS = 10V, ID = 0.5A IDR = 1A, VGS = 0 135 VDS = 10V, VGS = 0, f = 1MHz 85 50 VGS = 10V, ID = 0.5A VDD = 25V, RL = 50 120 390 800 0.6 25 1 220 390 1 -1.5 min typ max 10 10 45 2.5 380 680 Unit A A V V m m S V pF pF pF ns ns ns Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time Fall time Turn-off time (delay time) 1 Power Transistor Arrays (F-MOS FETs) Area of safe operation (ASO) 10 PUB4702 ID VGS 2.00 VDS=10V Ta=25C 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0 PD Ta 16 Allowable power dissipation PD (W) Non repetitive pulse TC=25C 14 12 3 (1) TC=Ta (2) With a 50 x 50 x 2mm Al heat sink (3) Without heat sink (1) Drain current ID (A) 100ms 1 10ms 10 8 6 (2) 4 (3) 2 0 0.3 0.1 0.03 0.3 1 3 10 30 0 20 40 60 80 100 120 140 160 Drain current ID (A) IDP t=1ms 0 1 2 3 4 5 Drain to source voltage VDS (V) Ambient temperature Ta (C) Gate to source voltage VGS (V) RDS(on) ID Drain to source ON-resistance RDS(on) (m) 700 2.5 | Yfs | ID Forward transfer admittance |Yfs| (S) VDS=10V Ta=25C Ciss, Coss, Crss VDS Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) 103 f=1MHz Ta=25C Ta=150C 600 85C 25C 400 2.0 500 1.5 Ciss 102 Coss 300 1.0 200 Crss 0.5 100 VGS=4V 0 0 1 2 3 4 5 0 0 0.5 1.0 1.5 2.0 10 0 5 10 15 20 25 Drain current ID (A) Drain current ID (A) Drain to source voltage VDS (V) Rth(t) t 102 Notes: Rth was measured at Ta=25C and under natural convection. Without heat sink Thermal resistance Rth(t) (C/W) 10 1 10-1 10-4 10-3 10-2 10-1 1 10 Time t (s) 2 |
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